this is information on a product in full production. november 2014 docid027082 rev 1 1/8 STPS20H100C-Y automotive power schottky rectifier datasheet ? production data features ? negligible switching losses ? high junction temperature capability ? good trade off between leakage current and forward voltage drop ? low leakage current ? avalanche rated ? aec-q101 qualified. ? ppap c apable description dual center tap schottky rectifier designed for high frequency miniature switched mode power supplies such as adaptators and on board dc/dc converters for automotive applications. . $ $ . ' e 3 $ . $ $ table 1. device summary symbol value i f(av) 2 x 10 a v rrm 100 v t j(max) 175 c v f (typ) 0.59 v www.st.com
characteristics STPS20H100C-Y 2/8 docid027082 rev 1 1 characteristics when the diodes 1 and 2 are used simultaneously: tj(diode 1) = p(diode1) x r th(j-c) (per diode) + p(diode 2) x r th(c) table 2. absolute ratings (limiting values per diode at 25 c, unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 100 v i f(rms) forward rms current 30 a i f(av) average forward current, = 0.5, t c = 160 c per diode 10 a per device 20 i fsm surge non repetitive forward current t p = 10 ms sinusoidal 250 a i rsm non repetitive peak reverse current t p = 100 s square 3 a p arm (1) repetitive peak avalanche power t p = 10 s, t j = 125 c 780 w t stg storage temperature range -65 to +175 c t j operating junction temperature (2) -40 to +175 c 1. for pulse time duration deratings, please refer to figure 3 . more details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the stmicroelectronics application notes an1768, ?admissible avalanche power of schottky diodes? and an2025, ?converter improvement using schottky rectifier avalanche specification?. 2. condition to avoid thermal runaway for a diode on its own heatsink dptot dtj < 1 rth(j-a) table 3. thermal parameters symbol parameter value unit r th(j-c) junction to case per diode 1.6 c/w per device 0.9 r th(c) coupling 0.15 table 4. static electrical characteristics (per diode) symbol parameter test conditions min. typ max. unit i r (1) reverse leakage current t j = 25 c v r = v rrm --4.5a t j = 125 c - 2 6 ma v f (2) forward voltage drop t j = 25 c i f = 10 a - - 0.77 v t j = 125 c - 0.59 0.64 t j = 25 c i f = 20 a - - 0.88 t j = 125 c - 0.67 0.73 1. pulse test: t p = 5 ms, < 2% 2. pulse test: t p = 380 s, < 2%
docid027082 rev 1 3/8 STPS20H100C-Y characteristics 8 to evaluate the conduction losses use the following equation: p = 0.55 x i f(av) + 0.009 x i f 2 (rms) figure 1. average forward power dissipation versus average forward current (per diode) figure 2. average forward current versus ambient temperature ( = 0.5, per diode) p (w) f(av) 024681012 0 2 4 6 8 t =tp/t tp i (a) f(av) = 0.05 = 0.1 = 0.2 = 0.5 = 1 7 d p e ? & |